Boron oxide is also called "boric anhydride". The chemical formula B2O3 is dissolved in hot water and only slightly dissolved in cold water. Form boric acid in water. Form volatile metaborate in hot water vapor. In the molten state, a variety of metal oxides can be dissolved to obtain colored boron glass. Alkali metals, magnesium and aluminum can reduce it to boron.

Boron trioxide physicochemical properties
Appearance and Properties:White powder or glass sheets 
Density:2.46 g/mL at 25 °C(lit.) 
Boiling point:1860 °C 
Melting point:450 °C(lit.) 
Flash point:1860°C 
Water solubility:36 g/L (25 ºC) 
Stability:Stable. Moisture sensitive. Incompatible with water. 
Storage conditions:The warehouse is ventilated and dried at low temperature and stored separately from lime 
Vapor density:>1 (vs air)

Boron oxide can be widely used as a flux in silicate decomposition, dopant of semiconductor materials, acid catalyst in organic synthesis, refractory additive in paint and raw materials for the preparation of elemental boron and a variety of borides, etc. High purity boron oxide (≥99.999%) is the liquid sealing agent for the manufacture of group III to compound semiconductors (such as  arsenide, phosphide, indium arsenide). In recent years, with the rapid development of the LED industry, the production of arsenide as its substrate material is increasing, and the demand for high-purity boron oxide is also increasing.

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1. Determination of silica and alkali in silicate analysis, blowpipe analysis, and flux for decomposition of silicate.
   2. It is used as a flux during silicate decomposition, a dopant for semiconductor materials, a fire-resistant additive for heat-resistant glassware and paints. It is a raw material for the preparation of elemental boron and various boron compounds.
   3. It is used in the metallurgical industry for the production of alloy steel.
   4. It can be used as a catalyst for organic synthesis, additives for lubricants for high temperature and chemical reagents.
   5. Used as analytical reagent, such as flux for decomposing samples, for the preparation of boron. It is also used as a doping source for semiconductor silicon. High-purity reagents for epitaxial and diffusion processes in semiconductor production.